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 1N4148WT / 1N4448WT / 1N 914BWT — High Conductanc e Fast Switching Diode ? 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N4148WT / 1N4448WT / 1N914BWT Rev. A2 1 September 2009 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode Features ? Fast Switching Diode (Trr <4.0nsec) ? Flat Lead, Surface Mount Device Under 0.70mm Height ? Extremely Small Outline Plastic Package SOD523F ? Moisture Level Sensitivity 1 ? Pb-free Version and RoHS Compliant ? Matte Tin (Sn) Lead Finish ? Green Mold Compound Absolute Maximum Ratings* TA=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics * Device mounted on FR-4 PCB minimum land pad. Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Value Units VRSM Non-Repetitive Peak Reverse Voltage 75 V VRRM Repetitive Peak Reverse Voltage 75 V I FRM Repetitive Peak Forward Current 300 mA TJ Operating Junction Temperature Range -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C Symbol Parameter Value Units PD Power Dissipation (TC=25°C) 200 mW RθJA Thermal Resistance, Junction to Ambient 500 °C/W Symbol Parameter Test Conditions Min Typ Max Units BVR Breakdown Voltage IR = 100 μA IR = 5 μA 100 75 V IR Reverse Current VR = 20 V VR = 75 V 25 5 nA μA VF Forward Voltage 1N4148WT 1N4448WT/ 914BWT 1N4448WT/ 914BWT IF = 5 mA IF = 10 mA IF = 100 mA 0.62 0.72 1 1 V CO Diode Capacitance VR = 0, f = 1 MHz 4 pF TRR Reverse Recovery Time I F = 10 mA, VR = 6.0 V I RR = 1 mA, RL = 100 Ω 4nS SOD-523F Band Indicates Cathode Device Marking Code Device Type Device Marking 1N4148WT E1 1N4448WT E2 1N914BWT E3 Cathode ELECTRICAL SYMBOL Anode |